Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging

Abstract Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal‐oxide‐semiconductor (CMOS) architectures. In order to understand the driving me...

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Bibliographic Details
Published in:	Advanced Electronic Materials
Main Authors:	Matthew Flynn‐Hepford, John Lasseter, Ivan Kravchenko, Steven Randolph, Jong Keum, Bobby G. Sumpter, Stephen Jesse, Petro Maksymovych, A. Alec Talin, Matthew J. Marinella, Philip D. Rack, Anton V. Ievlev, Olga S. Ovchinnikova
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-01-01
Subjects:	memristors ReRAM tantalum oxide
Online Access:	https://doi.org/10.1002/aelm.202300589

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