Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide
The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nano...
| Published in: | Chemical Physics Impact |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-06-01
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667022423002931 |
| Summary: | The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nanoindentation tests. Raman spectra gives the carbonaceous point of view based on existing models. A heterogenous crystallization was evident from getting a G-peak doublet. The experimental evidence of theoretically predicted SiC2N2 and Si2CN4 phases as per the phase diagram were found and confirmed by EDAX studies. These stable phases provided enhanced mechanical properties of the coatings |
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| ISSN: | 2667-0224 |