Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide
The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nano...
| Published in: | Chemical Physics Impact |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-06-01
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667022423002931 |
| _version_ | 1850292238057209856 |
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| author | A.S. Bhattacharyya |
| author_facet | A.S. Bhattacharyya |
| author_sort | A.S. Bhattacharyya |
| collection | DOAJ |
| container_title | Chemical Physics Impact |
| description | The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nanoindentation tests. Raman spectra gives the carbonaceous point of view based on existing models. A heterogenous crystallization was evident from getting a G-peak doublet. The experimental evidence of theoretically predicted SiC2N2 and Si2CN4 phases as per the phase diagram were found and confirmed by EDAX studies. These stable phases provided enhanced mechanical properties of the coatings |
| format | Article |
| id | doaj-art-e9b2bcbdcc01447586a4244dfd8fc1db |
| institution | Directory of Open Access Journals |
| issn | 2667-0224 |
| language | English |
| publishDate | 2024-06-01 |
| publisher | Elsevier |
| record_format | Article |
| spelling | doaj-art-e9b2bcbdcc01447586a4244dfd8fc1db2025-08-19T23:34:50ZengElsevierChemical Physics Impact2667-02242024-06-01810045410.1016/j.chphi.2023.100454Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbideA.S. Bhattacharyya0Department of Metallurgical and Materials Engineering, Central University of Jharkhand, Ranchi 835205, India; Centre of Excellence in Green and Efficient Energy Technology (CoE GEET), Central University of Jharkhand, Ranchi 835205, India; Correspondence to: Department of Metallurgical and Materials Engineering, Central University of Jharkhand, Ranchi 835205, India.The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nanoindentation tests. Raman spectra gives the carbonaceous point of view based on existing models. A heterogenous crystallization was evident from getting a G-peak doublet. The experimental evidence of theoretically predicted SiC2N2 and Si2CN4 phases as per the phase diagram were found and confirmed by EDAX studies. These stable phases provided enhanced mechanical properties of the coatingshttp://www.sciencedirect.com/science/article/pii/S2667022423002931Silicon carbideNitrogenSputteringBondingRaman |
| spellingShingle | A.S. Bhattacharyya Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide Silicon carbide Nitrogen Sputtering Bonding Raman |
| title | Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide |
| title_full | Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide |
| title_fullStr | Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide |
| title_full_unstemmed | Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide |
| title_short | Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide |
| title_sort | growth of stable sic2n2 si2cn4 phases during nitrogen incorporated sputter deposition of silicon carbide |
| topic | Silicon carbide Nitrogen Sputtering Bonding Raman |
| url | http://www.sciencedirect.com/science/article/pii/S2667022423002931 |
| work_keys_str_mv | AT asbhattacharyya growthofstablesic2n2si2cn4phasesduringnitrogenincorporatedsputterdepositionofsiliconcarbide |