Growth of stable SiC2N2-Si2CN4 phases during nitrogen incorporated sputter deposition of silicon carbide
The incorporation of nitrogen during sputtering of silicon carbide (SiC) target facilitates formation of different technologically significant phases. The bonding nature in these phases serve as the means of enhancing the hardness and toughness of the overall film getting deposited as shown by nano...
| 出版年: | Chemical Physics Impact |
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| 第一著者: | |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
Elsevier
2024-06-01
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| 主題: | |
| オンライン･アクセス: | http://www.sciencedirect.com/science/article/pii/S2667022423002931 |