He, Z., Wang, T., Chen, L., Zhu, H., Sun, Q., Ding, S., & Zhang, D. W. (2019, February). Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications. Nanoscale Research Letters.
Chicago Style (17th ed.) CitationHe, Zhen-Yu, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang. "Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications." Nanoscale Research Letters Feb. 2019.
MLA (9th ed.) CitationHe, Zhen-Yu, et al. "Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications." Nanoscale Research Letters, Feb. 2019.
Warning: These citations may not always be 100% accurate.