Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

• Published in: Nanoscale Research Letters
• Main Authors: Zhen-Yu He, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang
• Format: Article
• Language: English
• Published: SpringerOpen 2019-02-01
• Subjects: Computing in-memory; RRAM; Switching; Implemented
• Online Access: http://link.springer.com/article/10.1186/s11671-019-2875-4

Abstract With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome the von Neumann bottleneck problem of traditional computers [Backus, J, Can programming be liberated from the von Neumann style?, 1977]. In this work, HfAlOx-based RRAM which is compatible with CMOS technology was fabricated by an atomic layer deposition (ALD) process. Metal Ag and TaN are selected as top electrodes (TE). Experiments show that the Ag/HfAlOx/Pt device has demonstrated advantages as a memory-computing device because of the low set voltage (0.33~0.6 V) which means low power consumption and good uniformity. Based on a Ag/HfAlOx/Pt structure, IMP logic was implemented at high speed by applying a 100-ns high-frequency low-voltage pulse (0.3 V and 0.6 V). After two steps of IMP implementation, NAND can also be obtained.