Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

Abstract With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome the von Neumann bottleneck problem of t...

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出版年:	Nanoscale Research Letters
主要な著者:	Zhen-Yu He, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang
フォーマット:	論文
言語:	英語
出版事項:	SpringerOpen 2019-02-01
主題:	Computing in-memory RRAM Switching Implemented
オンライン･アクセス:	http://link.springer.com/article/10.1186/s11671-019-2875-4