Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application
Optoelectronic devices such as solar panels, cameras, screens, and sensors frequently suffer reduced performance due to dust accumulation. Incorporating self-cleaning features not only sustains their efficiency but also minimizes maintenance expenses, especially for large or challenging-to-access se...
| Published in: | Hybrid Advances |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-08-01
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2773207X24001210 |
| _version_ | 1850300818637455360 |
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| author | Manohar Singh Anit K. Ambedkar Durvesh Gautam Ashwani Kumar Yogendra K. Gautam Yajvendra Kumar Anuj Kumar Beer Pal Singh |
| author_facet | Manohar Singh Anit K. Ambedkar Durvesh Gautam Ashwani Kumar Yogendra K. Gautam Yajvendra Kumar Anuj Kumar Beer Pal Singh |
| author_sort | Manohar Singh |
| collection | DOAJ |
| container_title | Hybrid Advances |
| description | Optoelectronic devices such as solar panels, cameras, screens, and sensors frequently suffer reduced performance due to dust accumulation. Incorporating self-cleaning features not only sustains their efficiency but also minimizes maintenance expenses, especially for large or challenging-to-access setups. In this study, copper doped-zinc oxide (CZO) thin films with varying copper (Cu) concentrations were created using the reactive co-sputtering process. These films underwent a comprehensive analysis, including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy to examine their structure, morphology, and elemental composition. Optical properties were investigated through UV–Vis spectroscopy, while hydrophobicity and electrical characteristics were assessed with contact angle and I–V measurements. Spectroscopic ellipsometry was employed to analyse surface attributes. The results confirmed that as Cu concentrations increased, the crystallite and grain size of ZnO in the films also increased. A red shift in the band gap was observed in UV–Vis spectroscopy, and Cu doping effectively reduced the electrical resistivity of the ZnO thin film. The CZO thin film, with a 60 nm thickness, low roughness (1.49 nm), high optical transmittance (around 80.20 %), a wide band gap (3.22 eV), a substantial contact angle (113°), and low electrical resistivity (5.9 × 105 Ω cm), holds great promise for use in transparent, conductive, and self-cleaning optoelectronic devices. |
| format | Article |
| id | doaj-art-eaba302ee2c8419ea94984c557f3ce88 |
| institution | Directory of Open Access Journals |
| issn | 2773-207X |
| language | English |
| publishDate | 2024-08-01 |
| publisher | Elsevier |
| record_format | Article |
| spelling | doaj-art-eaba302ee2c8419ea94984c557f3ce882025-08-19T23:31:12ZengElsevierHybrid Advances2773-207X2024-08-01610026010.1016/j.hybadv.2024.100260Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic applicationManohar Singh0Anit K. Ambedkar1Durvesh Gautam2Ashwani Kumar3Yogendra K. Gautam4Yajvendra Kumar5Anuj Kumar6Beer Pal Singh7Department of Physics, Chaudhary Charan Singh University, Meerut, 250004, IndiaDepartment of Physics, Chaudhary Charan Singh University, Meerut, 250004, IndiaDepartment of Physics, Chaudhary Charan Singh University, Meerut, 250004, IndiaDepartment of Physics, Regional Institute of Education (NCERT), Bhubaneswar, Odisha, 751022, India; Corresponding author.Department of Physics, Chaudhary Charan Singh University, Meerut, 250004, IndiaDepartment of Physics, D.P.B.S.(P.G.) College Anupshar, Bulandshar, 203390, IndiaDepartment of Physics, Chaudhary Charan Singh University, Meerut, 250004, IndiaDepartment of Physics, Chaudhary Charan Singh University, Meerut, 250004, India; Corresponding author.Optoelectronic devices such as solar panels, cameras, screens, and sensors frequently suffer reduced performance due to dust accumulation. Incorporating self-cleaning features not only sustains their efficiency but also minimizes maintenance expenses, especially for large or challenging-to-access setups. In this study, copper doped-zinc oxide (CZO) thin films with varying copper (Cu) concentrations were created using the reactive co-sputtering process. These films underwent a comprehensive analysis, including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy to examine their structure, morphology, and elemental composition. Optical properties were investigated through UV–Vis spectroscopy, while hydrophobicity and electrical characteristics were assessed with contact angle and I–V measurements. Spectroscopic ellipsometry was employed to analyse surface attributes. The results confirmed that as Cu concentrations increased, the crystallite and grain size of ZnO in the films also increased. A red shift in the band gap was observed in UV–Vis spectroscopy, and Cu doping effectively reduced the electrical resistivity of the ZnO thin film. The CZO thin film, with a 60 nm thickness, low roughness (1.49 nm), high optical transmittance (around 80.20 %), a wide band gap (3.22 eV), a substantial contact angle (113°), and low electrical resistivity (5.9 × 105 Ω cm), holds great promise for use in transparent, conductive, and self-cleaning optoelectronic devices.http://www.sciencedirect.com/science/article/pii/S2773207X24001210Cu doped ZnOReactive-co-sputteringHydrophobicEllipsometryElectric-resistivity |
| spellingShingle | Manohar Singh Anit K. Ambedkar Durvesh Gautam Ashwani Kumar Yogendra K. Gautam Yajvendra Kumar Anuj Kumar Beer Pal Singh Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application Cu doped ZnO Reactive-co-sputtering Hydrophobic Ellipsometry Electric-resistivity |
| title | Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application |
| title_full | Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application |
| title_fullStr | Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application |
| title_full_unstemmed | Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application |
| title_short | Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application |
| title_sort | tailoring the structural optical hydrophobicity and electrical properties of zno thin films by copper doping for self clean optoelectronic application |
| topic | Cu doped ZnO Reactive-co-sputtering Hydrophobic Ellipsometry Electric-resistivity |
| url | http://www.sciencedirect.com/science/article/pii/S2773207X24001210 |
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