Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer
We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transist...
| 發表在: | Nanomaterials |
|---|---|
| Main Authors: | , |
| 格式: | Article |
| 語言: | 英语 |
| 出版: |
MDPI AG
2022-09-01
|
| 主題: | |
| 在線閱讀: | https://www.mdpi.com/2079-4991/12/17/3063 |
| _version_ | 1851077329642586112 |
|---|---|
| author | Ki-Woong Park Won-Ju Cho |
| author_facet | Ki-Woong Park Won-Ju Cho |
| author_sort | Ki-Woong Park |
| collection | DOAJ |
| container_title | Nanomaterials |
| description | We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Ni-silicide (NiSi) Schottky-barrier source/drain (S/D) junction. The undoped poly-Si channel and the NiSi S/D contact allowed conduction by electrons and holes, resulting in artificial synaptic behavior in both p-type and n-type regions. A slow polarization reaction by the mobile ions such as anions (CH<sub>3</sub>COO<sup>−</sup> and OH<sup>−</sup>) and cations (H<sup>+</sup>) in the chitosan EDL induced hysteresis window in the transfer characteristics of the ambipolar TFTs. We demonstrated the excitatory post-synaptic current modulations and stable conductance modulation through repetitive potentiation and depression pulse. We expect the proposed ambipolar chitosan synaptic transistor that responds effectively to both positive and negative stimulation signals to provide more complex information process versatility for bio-inspired neuromorphic computing systems. |
| format | Article |
| id | doaj-art-eabd05c6e3e14fdaabd1a5f871bc07d6 |
| institution | Directory of Open Access Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| spelling | doaj-art-eabd05c6e3e14fdaabd1a5f871bc07d62025-08-19T22:33:09ZengMDPI AGNanomaterials2079-49912022-09-011217306310.3390/nano12173063Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double LayerKi-Woong Park0Won-Ju Cho1Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-Dong, Nowon-Gu, Seoul 139-701, KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-Dong, Nowon-Gu, Seoul 139-701, KoreaWe propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Ni-silicide (NiSi) Schottky-barrier source/drain (S/D) junction. The undoped poly-Si channel and the NiSi S/D contact allowed conduction by electrons and holes, resulting in artificial synaptic behavior in both p-type and n-type regions. A slow polarization reaction by the mobile ions such as anions (CH<sub>3</sub>COO<sup>−</sup> and OH<sup>−</sup>) and cations (H<sup>+</sup>) in the chitosan EDL induced hysteresis window in the transfer characteristics of the ambipolar TFTs. We demonstrated the excitatory post-synaptic current modulations and stable conductance modulation through repetitive potentiation and depression pulse. We expect the proposed ambipolar chitosan synaptic transistor that responds effectively to both positive and negative stimulation signals to provide more complex information process versatility for bio-inspired neuromorphic computing systems.https://www.mdpi.com/2079-4991/12/17/3063Ni-silicideambipolar channelpolycrystalline siliconthin-film transistorartificial synaptic transistorchitosan electrolyte |
| spellingShingle | Ki-Woong Park Won-Ju Cho Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer Ni-silicide ambipolar channel polycrystalline silicon thin-film transistor artificial synaptic transistor chitosan electrolyte |
| title | Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer |
| title_full | Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer |
| title_fullStr | Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer |
| title_full_unstemmed | Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer |
| title_short | Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer |
| title_sort | binary synaptic plasticity in ambipolar ni silicide schottky barrier poly si thin film transistors using chitosan electric double layer |
| topic | Ni-silicide ambipolar channel polycrystalline silicon thin-film transistor artificial synaptic transistor chitosan electrolyte |
| url | https://www.mdpi.com/2079-4991/12/17/3063 |
| work_keys_str_mv | AT kiwoongpark binarysynapticplasticityinambipolarnisilicideschottkybarrierpolysithinfilmtransistorsusingchitosanelectricdoublelayer AT wonjucho binarysynapticplasticityinambipolarnisilicideschottkybarrierpolysithinfilmtransistorsusingchitosanelectricdoublelayer |