Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer

We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transist...

Full description

Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Ki-Woong Park, Won-Ju Cho
Format:	Article
Language:	English
Published:	MDPI AG 2022-09-01
Subjects:	Ni-silicide ambipolar channel polycrystalline silicon thin-film transistor artificial synaptic transistor chitosan electrolyte
Online Access:	https://www.mdpi.com/2079-4991/12/17/3063