Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications

Abstract Digital storage and analog storage shine in different fields mainly due to their strong stability and high information density, respectively, while the freely selective digital and analog resistance switching applications are a matter of great concern. Here, a multi‐functional device integr...

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Bibliographic Details
Published in:	Advanced Electronic Materials
Main Authors:	Siying Tian, Changhao Wang, Yuanjie Wang, Honghao Wang, Chenxi Gao, Weisen Hu, Jia Wei, Fengling Chen, Dapeng Sun, Xu Zheng, Chaobo Li, Chujun Yin
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-06-01
Subjects:	analog and digital resistive switching ferroelectric semiconductor α‐In2Se3 neuromorphic computing performance modulation reconfigurable multifunctional devices
Online Access:	https://doi.org/10.1002/aelm.202400734

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