STRUCTURE AND techological improvments of tmbs diodes

An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and improvement of the diode parameters.

التفاصيل البيبلوغرافية
الحاوية / القاعدة:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
المؤلفون الرئيسيون: V. S. Kotov, N. F. Golubev, V. E. Borisenko
التنسيق: مقال
اللغة:الروسية
منشور في: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
الموضوعات:
диод
проектирование
технология
моп структура
пробивное напряжение
ток утечки
الوصول للمادة أونلاين:https://doklady.bsuir.by/jour/article/view/199
الوصف
الملخص:An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and improvement of the diode parameters.
تدمد:1729-7648

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