| 要約: | SnS<sub>1−x</sub>Se<sub>x</sub> (x = 0–1) films composed of vertically oriented nanosheet arrays were fabricated by vacuum thermal evaporation. The compositions of the SnS<sub>1−x</sub>Se<sub>x</sub> films were well tuned from SnS to SnSe, while their structures and morphology maintained the orthorhombic phase and the uniform nanosheet arrays. Se doping enhances the light absorption of the films, especially in the near-infrared region. The direct and indirect band gaps of the SnS<sub>1−x</sub>Se<sub>x</sub> (x = 0–1) nanosheet arrays films gradually changed from 1.26 eV and 1.12 eV for SnS to 1.00 eV and 0.79 eV for SnSe, respectively, with the change in compositions. The adjustable band gap makes these films promising candidates for infrared photodetectors and solar energy devices.
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