Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction

Photoelectric synapses are attracting intensive attention due to its low power consumption and adaptive learning. However, traditional ferroelectric field effect transistors are not conducive to the integrated application in artificial intelligence systems. Here, we design the all two-dimensional ph...

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Published in:Materials Research Express
Main Author: Xuanyan Zhao
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ad4e0c
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author Xuanyan Zhao
author_facet Xuanyan Zhao
author_sort Xuanyan Zhao
collection DOAJ
container_title Materials Research Express
description Photoelectric synapses are attracting intensive attention due to its low power consumption and adaptive learning. However, traditional ferroelectric field effect transistors are not conducive to the integrated application in artificial intelligence systems. Here, we design the all two-dimensional photoelectric synapse device based on WSe _2 /MoS _2 / α -In _2 Se _3 ferroelectric van der Waals heterojunction, which has high memory capacity (memory on/off = 10 ^5 ) and synaptic function. In addition, we simulate an artificial neural network to modify the handwritten digit recognition of the National Institute of Standards and Technology. In particular, the recognition rates are 92.4% and 93.6% for electrical synapse and photoelectric synapse, respectively. This work provides an effective strategy for achieving stable integration of neuromorphic computing.
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spelling doaj-art-fe19796ff3cf4fc8b792f4d1918dfdcf2025-08-19T22:55:23ZengIOP PublishingMaterials Research Express2053-15912024-01-0111505590110.1088/2053-1591/ad4e0cPhotoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunctionXuanyan Zhao0https://orcid.org/0009-0002-1635-3292School of Software, Nanchang University , Nanchang, Jiangxi, 330031, People’s Republic of ChinaPhotoelectric synapses are attracting intensive attention due to its low power consumption and adaptive learning. However, traditional ferroelectric field effect transistors are not conducive to the integrated application in artificial intelligence systems. Here, we design the all two-dimensional photoelectric synapse device based on WSe _2 /MoS _2 / α -In _2 Se _3 ferroelectric van der Waals heterojunction, which has high memory capacity (memory on/off = 10 ^5 ) and synaptic function. In addition, we simulate an artificial neural network to modify the handwritten digit recognition of the National Institute of Standards and Technology. In particular, the recognition rates are 92.4% and 93.6% for electrical synapse and photoelectric synapse, respectively. This work provides an effective strategy for achieving stable integration of neuromorphic computing.https://doi.org/10.1088/2053-1591/ad4e0cferroelectric van der Waals heterojunctionmemorysynaptic function
spellingShingle Xuanyan Zhao
Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction
ferroelectric van der Waals heterojunction
memory
synaptic function
title Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction
title_full Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction
title_fullStr Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction
title_full_unstemmed Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction
title_short Photoelectric synapses based on all-two-dimensional ferroelectric semiconductor heterojunction
title_sort photoelectric synapses based on all two dimensional ferroelectric semiconductor heterojunction
topic ferroelectric van der Waals heterojunction
memory
synaptic function
url https://doi.org/10.1088/2053-1591/ad4e0c
work_keys_str_mv AT xuanyanzhao photoelectricsynapsesbasedonalltwodimensionalferroelectricsemiconductorheterojunction