Photoluminescence Redistribution of InGaN Nanowires Induced by Plasmonic Silver Nanoparticles
Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles induce the redistribution of room temperature photoluminescence between short-wavelength and long-wavelength peaks of InGaN nan...
| Published in: | Nanomaterials |
|---|---|
| Main Authors: | Talgat Shugabaev, Vladislav O. Gridchin, Sergey D. Komarov, Demid A. Kirilenko, Natalia V. Kryzhanovskaya, Konstantin P. Kotlyar, Rodion R. Reznik, Yelizaveta I. Girshova, Valentin V. Nikolaev, Michael A. Kaliteevski, George E. Cirlin |
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
|
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/6/1069 |
Similar Items
Fröhlich resonance splitting in hybrid GaN nanowire-Ag nanoparticle structures
by: Galia Pozina, et al.
Published: (2024-01-01)
by: Galia Pozina, et al.
Published: (2024-01-01)
Modeling and Epitaxial Growth of Homogeneous <em>Long</em>-InGaN Nanowire Structures
by: Sung-Un Kim, et al.
Published: (2020-12-01)
by: Sung-Un Kim, et al.
Published: (2020-12-01)
Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells
by: Narihito Okada, et al.
Published: (2022-09-01)
by: Narihito Okada, et al.
Published: (2022-09-01)
Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires
by: Galia Pozina, et al.
Published: (2023-04-01)
by: Galia Pozina, et al.
Published: (2023-04-01)
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)
by: Haruka Matsuura, et al.
Published: (2019-04-01)
MOCVD of InGaN on ScAlMgO<sub>4</sub> on Al<sub>2</sub>O<sub>3</sub> Substrates with Improved Surface Morphology and Crystallinity
by: Guangying Wang, et al.
Published: (2023-03-01)
by: Guangying Wang, et al.
Published: (2023-03-01)
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets
by: Mani Azadmand, et al.
Published: (2022-11-01)
by: Mani Azadmand, et al.
Published: (2022-11-01)
Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
by: Yao Xing, et al.
Published: (2019-03-01)
by: Yao Xing, et al.
Published: (2019-03-01)
Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy
by: Xue Zhang, et al.
Published: (2021-10-01)
by: Xue Zhang, et al.
Published: (2021-10-01)
Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory
by: Vladislav O. Gridchin, et al.
Published: (2022-07-01)
by: Vladislav O. Gridchin, et al.
Published: (2022-07-01)
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
by: Liwen Cheng, et al.
Published: (2021-08-01)
by: Liwen Cheng, et al.
Published: (2021-08-01)
Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy
by: Ying Gu, et al.
Published: (2023-04-01)
by: Ying Gu, et al.
Published: (2023-04-01)
Purcell Effect and Beaming of Emission in Hybrid AlGaAs Nanowires with GaAs Quantum Dots
by: Rodion R. Reznik, et al.
Published: (2021-10-01)
by: Rodion R. Reznik, et al.
Published: (2021-10-01)
Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells
by: Yachen Wang, et al.
Published: (2022-09-01)
by: Yachen Wang, et al.
Published: (2022-09-01)
Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells
by: Yachen Wang, et al.
Published: (2022-06-01)
by: Yachen Wang, et al.
Published: (2022-06-01)
Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
by: Liliia Dvoretckaia, et al.
Published: (2022-06-01)
by: Liliia Dvoretckaia, et al.
Published: (2022-06-01)
Characterization and functionalization of ternary InGaN nanosurface towards energy storage system in solar cell basics: a molecular modelling study
by: F. Mollaamin
Published: (2025-06-01)
by: F. Mollaamin
Published: (2025-06-01)
The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement
by: Fulong Jiang, et al.
Published: (2018-01-01)
by: Fulong Jiang, et al.
Published: (2018-01-01)
Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy
by: Xue Zhang, et al.
Published: (2022-02-01)
by: Xue Zhang, et al.
Published: (2022-02-01)
Electromagnetic Nanocoils Based on InGaN Nanorings
by: Ziwen Yan, et al.
Published: (2025-02-01)
by: Ziwen Yan, et al.
Published: (2025-02-01)
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes
by: Pavel Kirilenko, et al.
Published: (2021-09-01)
by: Pavel Kirilenko, et al.
Published: (2021-09-01)
Electrical generation of surface phonon polaritons
by: Gubbin Christopher R., et al.
Published: (2023-05-01)
by: Gubbin Christopher R., et al.
Published: (2023-05-01)
In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching
by: Abdul Kareem K. Soopy, et al.
Published: (2021-01-01)
by: Abdul Kareem K. Soopy, et al.
Published: (2021-01-01)
Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity
by: Ou Wei, et al.
Published: (2023-12-01)
by: Ou Wei, et al.
Published: (2023-12-01)
Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method
by: Keito Mori-Tamamura, et al.
Published: (2024-12-01)
by: Keito Mori-Tamamura, et al.
Published: (2024-12-01)
Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity
by: Andrei Sarua, et al.
Published: (2023-01-01)
by: Andrei Sarua, et al.
Published: (2023-01-01)
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities
by: Artem Bercha, et al.
Published: (2025-01-01)
by: Artem Bercha, et al.
Published: (2025-01-01)
Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed
by: Jixing Chai, et al.
Published: (2023-03-01)
by: Jixing Chai, et al.
Published: (2023-03-01)
Efficiency enhancement of InGaN amber MQWs using nanopillar structures
by: Ou Yiyu, et al.
Published: (2018-01-01)
by: Ou Yiyu, et al.
Published: (2018-01-01)
From Micro to Macro: A Relativistic Treatment of the Chiral Energy Shifts Caused by Static Electromagnetic Effects on Free Electrons
by: Philip Kurian
Published: (2022-03-01)
by: Philip Kurian
Published: (2022-03-01)
Modelo de Kirkwood-Fröhlich para fluidos polares puros
by: Paulo Peixoto, et al.
Published: (2021-10-01)
by: Paulo Peixoto, et al.
Published: (2021-10-01)
Fröhlich Systems in Cellular Physiology
by: Fedor Šrobár
Published: (2012-01-01)
by: Fedor Šrobár
Published: (2012-01-01)
Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
by: ChengDa Tsai, et al.
Published: (2019-06-01)
by: ChengDa Tsai, et al.
Published: (2019-06-01)
Study of Predicting the Performance of I-V Curves Through Photoluminescence Spectral Characteristics
by: Zhikun Hong, et al.
Published: (2024-01-01)
by: Zhikun Hong, et al.
Published: (2024-01-01)
Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation
by: Pavel Kirilenko, et al.
Published: (2022-12-01)
by: Pavel Kirilenko, et al.
Published: (2022-12-01)
Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties
by: Sergey Balakirev, et al.
Published: (2023-09-01)
by: Sergey Balakirev, et al.
Published: (2023-09-01)
Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells
by: Yuhao Ben, et al.
Published: (2021-04-01)
by: Yuhao Ben, et al.
Published: (2021-04-01)
Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells
by: Wei Liu, et al.
Published: (2022-02-01)
by: Wei Liu, et al.
Published: (2022-02-01)
Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers
by: Zhenyu Chen, et al.
Published: (2022-07-01)
by: Zhenyu Chen, et al.
Published: (2022-07-01)
The influence of excessive H2 during barrier growth on InGaN light-emitting diodes
by: Yangfeng Li, et al.
Published: (2020-01-01)
by: Yangfeng Li, et al.
Published: (2020-01-01)
Similar Items
-
Fröhlich resonance splitting in hybrid GaN nanowire-Ag nanoparticle structures
by: Galia Pozina, et al.
Published: (2024-01-01) -
Modeling and Epitaxial Growth of Homogeneous <em>Long</em>-InGaN Nanowire Structures
by: Sung-Un Kim, et al.
Published: (2020-12-01) -
Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells
by: Narihito Okada, et al.
Published: (2022-09-01) -
Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires
by: Galia Pozina, et al.
Published: (2023-04-01) -
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)
