APA (7th ed.) Citation

Kang, S. C., Jung, H., Chang, S., Kim, S. M., Lee, S. K., Lee, B. H., . . . Lim, J. (2020, October). Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors. Nanomaterials.

Chicago Style (17th ed.) Citation

Kang, Soo Cheol, et al. "Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors." Nanomaterials Oct. 2020.

MLA (9th ed.) Citation

Kang, Soo Cheol, et al. "Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors." Nanomaterials, Oct. 2020.