Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub>4</sub> plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresi...
| Published in: | Nanomaterials |
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| Main Authors: | , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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MDPI AG
2020-10-01
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| Online Access: | https://www.mdpi.com/2079-4991/10/11/2116 |
| _version_ | 1851837178759348224 |
|---|---|
| author | Soo Cheol Kang Hyun-Wook Jung Sung-Jae Chang Seung Mo Kim Sang Kyung Lee Byoung Hun Lee Haecheon Kim Youn-Sub Noh Sang-Heung Lee Seong-Il Kim Ho-Kyun Ahn Jong-Won Lim |
| author_facet | Soo Cheol Kang Hyun-Wook Jung Sung-Jae Chang Seung Mo Kim Sang Kyung Lee Byoung Hun Lee Haecheon Kim Youn-Sub Noh Sang-Heung Lee Seong-Il Kim Ho-Kyun Ahn Jong-Won Lim |
| author_sort | Soo Cheol Kang |
| collection | DOAJ |
| container_title | Nanomaterials |
| description | An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub>4</sub> plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al<sub>2</sub>O<sub>3</sub>/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits. |
| format | Article |
| id | doaj-art-fe8bc6099d2b4c19bc414e2ed09b6d2e |
| institution | Directory of Open Access Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2020-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| spelling | doaj-art-fe8bc6099d2b4c19bc414e2ed09b6d2e2025-08-19T22:29:53ZengMDPI AGNanomaterials2079-49912020-10-011011211610.3390/nano10112116Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility TransistorsSoo Cheol Kang0Hyun-Wook Jung1Sung-Jae Chang2Seung Mo Kim3Sang Kyung Lee4Byoung Hun Lee5Haecheon Kim6Youn-Sub Noh7Sang-Heung Lee8Seong-Il Kim9Ho-Kyun Ahn10Jong-Won Lim11DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaDMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, KoreaAn enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub>4</sub> plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al<sub>2</sub>O<sub>3</sub>/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.https://www.mdpi.com/2079-4991/10/11/2116AlGaN/GaN HEMTsenhancement-modefluorinated-gaterecessed gate |
| spellingShingle | Soo Cheol Kang Hyun-Wook Jung Sung-Jae Chang Seung Mo Kim Sang Kyung Lee Byoung Hun Lee Haecheon Kim Youn-Sub Noh Sang-Heung Lee Seong-Il Kim Ho-Kyun Ahn Jong-Won Lim Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors AlGaN/GaN HEMTs enhancement-mode fluorinated-gate recessed gate |
| title | Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors |
| title_full | Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors |
| title_fullStr | Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors |
| title_full_unstemmed | Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors |
| title_short | Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors |
| title_sort | charging effect by fluorine treatment and recess gate for enhancement mode on algan gan high electron mobility transistors |
| topic | AlGaN/GaN HEMTs enhancement-mode fluorinated-gate recessed gate |
| url | https://www.mdpi.com/2079-4991/10/11/2116 |
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