An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

To enhance the impact ionization coefficient of holes, we proposed an improved solar-blind AlGaN avalanche photodiode (APD) structure by using a low-Al-composition AlGaN multiplication layer and a filter based on periodic photonic crystal together with a composition graded interlayer between separat...

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Bibliographic Details
Main Authors: Qing Cai, Mei Ge, Junjun Xue, Liqun Hu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
AlGaN alloys
avalanche photodiodes
solar blind
composition graded interlayer.
Online Access:https://ieeexplore.ieee.org/document/7973092/

Internet

https://ieeexplore.ieee.org/document/7973092/

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