Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

GaN quantum dots embedded in nanowires have attracted much attention due to their superior optical properties. However, due to the large surface-to-volume ratio of the nanowire, the impacts of surface states are the primary issue responsible for the degradation of internal quantum efficiency (IQE) i...

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Bibliographic Details
Main Authors: Jun Deng, Zhibiao Hao, Lai Wang, Jiadong Yu, Jian Wang, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li, Wei Zhao, Xihui Liang, Junjun Wang, Yi Luo
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Nanomaterials
Subjects:
GaN/AlN
quantum dots
nanowire
core–shell
Online Access:https://www.mdpi.com/2079-4991/10/11/2299

Internet

https://www.mdpi.com/2079-4991/10/11/2299

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