Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affe...

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Bibliographic Details
Main Authors: Xiaotong Han, Peng Duan, Yan Peng, Xiwei Wang, Xuejian Xie, Jinying Yu, Xiufei Hu, Dufu Wang, Xiaobo Hu, Xiangang Xu
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Materials
Subjects:
basal plane bending
homoepitaxial single-crystal diamond (SCD)
high-resolution X-ray diffraction
growth temperature
Online Access:https://www.mdpi.com/1996-1944/13/20/4510

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https://www.mdpi.com/1996-1944/13/20/4510

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