Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generatio...

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Bibliographic Details
Main Authors: Zongjie Shen, Chun Zhao, Yanfei Qi, Wangying Xu, Yina Liu, Ivona Z. Mitrovic, Li Yang, Cezhou Zhao
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Nanomaterials
Subjects:
artificial intelligence
thin film
2D materials
switching mechanisms
bionic synaptic application
RRAM
Online Access:https://www.mdpi.com/2079-4991/10/8/1437

Internet

https://www.mdpi.com/2079-4991/10/8/1437

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