1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Bi-Layer Passivation at 2 GHz

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Bi-Layer Passivation at 2 GHz

We have demonstrated a novel method of depositing ALD-Al<sub>2</sub>O<sub>3</sub>/PECVD-SiO<sub>2</sub> bi-layer dielectric to passive the surface channels of the hydrogen-terminated diamond (H-diamond). After Al<sub>2</sub>O<sub>3</sub>/Si...

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Bibliographic Details
Main Authors: Xinxin Yu, Wenxiao Hu, Jianjun Zhou, Bin Liu, Tao Tao, Yuechan Kong, Tangsheng Chen, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
H-diamond
bi-layer passivation
output power
Online Access:https://ieeexplore.ieee.org/document/9305694/

Internet

https://ieeexplore.ieee.org/document/9305694/

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