Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious in...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia,
2014-10.
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| Online Access: | Get fulltext |