Simulation of 0.18 micron MOSFET and its characterization
The research is focused on the development of 0.18µm channel length of nchannel (NMOS) and p-channel (PMOS) enhancement mode MOSFET. Simulation of the process is carried out using Silvaco Athena to modify theoretical values and obtain more accurate process parameters. Non-ideal effect of a MOSFET...
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| Format: | Thesis |
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2005-10.
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| Online Access: | Get fulltext |