Annealing temperature induced improved crystallinity of ysz thin film

Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample anne...

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Bibliographic Details
Main Authors: Rusli, N. A. (Author), Muhammad, R. (Author), Ghoshal, S. K. (Author), Nur, H. (Author), Nayan, N. (Author)
Format: Article
Language:English
Published: Institute of Physics Publishing, 2020-05.
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