Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental evidence, we probe the origin of sub-band-gap optical absorption...

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Main Authors: Ertekin, Elif (Contributor), Winkler, Mark Thomas (Contributor), Recht, Daniel (Author), Said, Aurore J. (Author), Aziz, Michael J. (Author), Grossman, Jeffrey C. (Contributor), Buonassisi, Anthony (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity (Contributor), Buonassisi, Tonio (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2012-07-10T14:53:37Z.
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