Neon Ion Beam Lithography (NIBL)

Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2...

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Bibliographic Details
Main Authors: Winston, Donald (Contributor), Manfrinato, Vitor Riseti (Contributor), Nicaise, Samuel M. (Contributor), Cheong, Lin Lee (Contributor), Duan, Huigao (Contributor), Ferranti, David (Author), Marshman, Jeff (Author), McVey, Shawn (Author), Stern, Lewis (Author), Notte, John (Author), Berggren, Karl K. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2012-10-17T18:36:22Z.
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