Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

Intermediate-band materials have the potential to be highly efficient solar cells and can be fabricated by incorporating ultrahigh concentrations of deep-level dopants. Direct measurements of the ultrafast carrier recombination processes under supersaturated dopant concentrations have not been previ...

Full description

Bibliographic Details
Main Authors: Sher, Meng-Ju (Author), Krich, Jacob J. (Author), Recht, Daniel (Author), Aziz, Michael J. (Author), Lindenberg, Aaron M. (Author), Akey, Austin J (Author), Winkler, Mark Thomas (Author), Buonassisi, Anthony (Author), Simmons, Christie B. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity (Contributor), Massachusetts Institute of Technology. Photovoltaic Research Laboratory (Contributor), Simmons, Christie (Contributor), Akey, Austin J. (Contributor), Winkler, Mark T. (Contributor), Buonassisi, Tonio (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2015-06-09T15:42:54Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items