Reliability and hot-electron effects in analog and mixed-mode circuits
Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several ap...
Main Author: | Ge, David Ying |
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Other Authors: | Forbes, Leonard |
Language: | en_US |
Published: |
2013
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Subjects: | |
Online Access: | http://hdl.handle.net/1957/36252 |
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