Hot-carrier effects and NBTI in MOSFET''s
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In this thesis, we discussed hot-carrier effects in n-MOSFET and negative bias temperature instability(NBTI) in p-MOSFET. In n-MOSFET, we found the worst case stress condition occurred under Vg=peak Isub at operating voltage, and interface traps are primar...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25171049222462281137 |