Photoluminescence studies of InN dots and films
碩士 === 國立交通大學 === 電子物理系所 === 95 === InN dot density grown by flow-rate modulation epitaxy ( FME ) and metalorganic chemical vapor deposition ( MOCVD ) exhibited reduction with increasing growth temperature. Moreover, the InN dot growth rate in MOCVD mode was less that in FME mode. Growth temperature...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38271710279678602057 |