Epitaxial growth of nonpolar GaN based optoelectronic devices

博士 === 國立交通大學 === 光電工程系所 === 97 === In this dissertation, the epitaxial growth of nonpolar a-plane GaN based optoelectronic materials grown using metal organic chemical vapor deposition (MOCVD) have been investigated. Main works include optimum growth, InGaN multiple quantum wells (MQWs) design, red...

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Bibliographic Details
Main Authors: Ko, Tsung-Shine, 柯宗憲
Other Authors: Kuo, Hao-Chung
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/43011320137457312133