Epitaxial growth of nonpolar GaN based optoelectronic devices
博士 === 國立交通大學 === 光電工程系所 === 97 === In this dissertation, the epitaxial growth of nonpolar a-plane GaN based optoelectronic materials grown using metal organic chemical vapor deposition (MOCVD) have been investigated. Main works include optimum growth, InGaN multiple quantum wells (MQWs) design, red...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2009
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Online Access: | http://ndltd.ncl.edu.tw/handle/43011320137457312133 |