Fabrication and Characterization of Gallium Nitride Based Devices
博士 === 長庚大學 === 電子工程學系 === 101 === Gallium nitride based material system (AlGaInN) has been intensively studied over the past few decades. It has remarkable material properties including wide direct band-gap, high electron mobility, high breakdown voltage, high operation frequency, excellent chemica...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86793875780307935417 |