The study of optimizing GaN-based optoelectronic devices

博士 === 國立交通大學 === 光電工程研究所 === 103 === With developments and requirements of solid-state lightings and high-frequency electronic devices, wide-band gap III-nitrides become a popular materials due to broad wavelength range. However, unavoidable issue existed during the growth process of III-nitride ma...

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Bibliographic Details
Main Authors: Lee, Chia-Yu, 李佳祐
Other Authors: Kuo, Hao-Chung
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/75580736895630801667