The study of optimizing GaN-based optoelectronic devices
博士 === 國立交通大學 === 光電工程研究所 === 103 === With developments and requirements of solid-state lightings and high-frequency electronic devices, wide-band gap III-nitrides become a popular materials due to broad wavelength range. However, unavoidable issue existed during the growth process of III-nitride ma...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75580736895630801667 |