The investigation and improvement of GaN-based light emitting diodes and Ge FinFET performance through simulations
碩士 === 國立交通大學 === 光電工程研究所 === 104 === In this thesis, due to the development of the advanced optoelectronic devices are difficult, hence, we propose ways to improve and enhance the performance of optoelectronic devices, including gallium nitride (GaN) light-emitting diodes (LEDs) and germanium fin f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bxs392 |