Structural and Optical Properties of Molecular Beam Epitaxy Grown InAsBi Bulk Layers and Quantum Wells
abstract: InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V material...
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| Format: | Dissertation |
| Language: | English |
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2016
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| Online Access: | http://hdl.handle.net/2286/R.I.40220 |