Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

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A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced pos...

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Bibliographic Details
Main Authors: Bukhori, MF (Author), Hatta, SWM (Author), Hussin, H (Author), Soin, N (Author)
Format: Article
Language:English
Published: 2015
Subjects:
ENERGY-DISTRIBUTION
GENERATION
MECHANISMS
PERFORMANCE
POSITIVE CHARGES
STRESS
Online Access:View Fulltext in Publisher
Description
Summary:A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced positive charges based on energy profiling approach. The time exponent of 0.1 is observed in sub-threshold operation modelled based on the Two-Stage NBTI model while time exponent of 0.3 is observed in sub-threshold operation modelled based energy profiling approach. Considerable threshold voltage shifts are observed during sub-threshold operation based on both defect mechanisms. Extraction of E'centres and E'/ Pb H Complex as well as positive charges was found to be temperature dependence hence the degradation is also thermally activated during subthreshold operation for both defect mechanisms.
DOI:10.1088/1757-899X/99/1/012015

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