Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET
A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced pos...
Main Authors: | Bukhori, MF (Author), Hatta, SWM (Author), Hussin, H (Author), Soin, N (Author) |
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Format: | Article |
Language: | English |
Published: |
2015
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Subjects: | |
Online Access: | View Fulltext in Publisher |
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