Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced pos...

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Bibliographic Details
Main Authors: Bukhori, MF (Author), Hatta, SWM (Author), Hussin, H (Author), Soin, N (Author)
Format: Article
Language:English
Published: 2015
Subjects:
Online Access:View Fulltext in Publisher