Search Results - Feichi Zhou
- Showing 1 - 7 results of 7
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Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor by Peng Wang, Jie Li, Wuhong Xue, Wenjuan Ci, Fengxian Jiang, Lei Shi, Feichi Zhou, Peng Zhou, Xiaohong Xu
Published in Advanced Science (2024-01-01)Get full text
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CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor by Wenhui Wang, Ke Li, Jun Lan, Mei Shen, Zhongrui Wang, Xuewei Feng, Hongyu Yu, Kai Chen, Jiamin Li, Feichi Zhou, Longyang Lin, Panpan Zhang, Yida Li
Published in Nature Communications (2023-09-01)Get full text
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Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing by Guangdong Zhou, Jie Li, Qunliang Song, Lidan Wang, Zhijun Ren, Bai Sun, Xiaofang Hu, Wenhua Wang, Gaobo Xu, Xiaodie Chen, Lan Cheng, Feichi Zhou, Shukai Duan
Published in Nature Communications (2023-12-01)Get full text
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Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network by Quanzhou Zhu, Biyi Jiang, Jun Lan, Zeyu Hou, Yida Dong, Zhongrui Wang, Xuewei Feng, Mei Shen, Hongyu Yu, Kai Chen, Jiamin Li, Longyang Lin, Feichi Zhou, Yida Li
Published in Advanced Electronic Materials (2024-04-01)Get full text
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Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature by Jun Lan, Zhixiong Li, Zhenjie Chen, Quanzhou Zhu, Wenhui Wang, Muhammad Zaheer, Jiqing Lu, Jinxuan Liang, Mei Shen, Peng Chen, Kai Chen, Guobiao Zhang, Zhongrui Wang, Feichi Zhou, Longyang Lin, Yida Li
Published in Advanced Electronic Materials (2023-03-01)Get full text
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A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design by Hao Su, Yiyuan Cai, Shenghua Zhou, Guangchong Hu, Yu He, Yunfeng Xie, Yuhuan Lin, Chunhui Li, Tianqi Zhao, Jun Lan, Wenhui Wang, Wenxin Li, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen
Published in IEEE Journal of the Electron Devices Society (2024-01-01)Get full text
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