Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Abstract The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn‐doped HfOx‐based resistive random‐acces...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Jun Lan, Zhixiong Li, Zhenjie Chen, Quanzhou Zhu, Wenhui Wang, Muhammad Zaheer, Jiqing Lu, Jinxuan Liang, Mei Shen, Peng Chen, Kai Chen, Guobiao Zhang, Zhongrui Wang, Feichi Zhou, Longyang Lin, Yida Li
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-03-01
Subjects:	4 K cryogenic hafnium oxide resistive switching resistive random‐access memory (RRAM) zinc
Online Access:	https://doi.org/10.1002/aelm.202201250