Search Results - Gerhard Rzepa
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Design Decoupling of Inner- and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling by Krishna K. Bhuwalka, Oskar Baumgartner, Hao Wu, Lei Hou, Gerhard Rzepa, Dmitry Yakimets, Markus Karner, Changze Liu
Published in IEEE Journal of the Electron Devices Society (2025-01-01)Get full text
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2
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence by Mischa Thesberg, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, Gerhard Rzepa
Published in Micromachines (2024-06-01)Get full text
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3
On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET by Md. Nur Kutubul Alam, Ben Kaczer, Lars-Ake Ragnarsson, Mihaela Popovici, Gerhard Rzepa, Naoto Horiguchi, Marc Heyns, Jan Van Houdt
Published in IEEE Journal of the Electron Devices Society (2019-01-01)Get full text
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4
A Physical Model for the Hysteresis in MoS<sub>2</sub> Transistors by Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Published in IEEE Journal of the Electron Devices Society (2018-01-01)Get full text
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Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines by Xufan Li, Zhenhua Wu, Gerhard Rzepa, Markus Karner, Haoqing Xu, Zhicheng Wu, Wei Wang, Guanhua Yang, Qing Luo, Lingfei Wang, Ling Li
Published in Fundamental Research (2025-09-01)Get full text
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Exploring GAA-Nanosheet, Forksheet and GAA–Forksheet Architectures: A TCAD-DTCO Study at 90 nm and 120-nm Cell Height by Gautam Gaddemane, Pieter Schuddinck, Krishna Bhuwalka, Gerhard Rzepa, Gioele Mirabelli, Anshul Gupta, Jurgen Bommels, Philippe Matagne, Dmitry Yakimets, Hao Wu, Lei Hou, Geert Hellings, Changze Liu
Published in IEEE Journal of the Electron Devices Society (2025-01-01)Get full text
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