Search Results - J. Ajayan

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  1. 1

    Development of biodegradable PLA/Nanoclay/ZnO polymer films for future Industrial packaging applications by A. Akshaykranth, J. Ajayan, N. Anitha

    Published in Results in Surfaces and Interfaces (2025-05-01)
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  2. 2

    Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer by Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan

    Published in Micromachines (2025-06-01)
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  3. 3

    Finite impulse response design based on two-level transpose Vedic multiplier for medical image noise reduction by Joghee Prasad, Arun Sekar Rajasekaran, J. Ajayan, Kambatty Bojan Gurumoorthy

    Published in ETRI Journal (2024-08-01)
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  4. 4

    Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review by J. Ajayan, Vakkalakula Bharath Sreenivasulu, N. Aruna Kumari, S. Sreejith, Subhajit Das

    Published in IEEE Access (2025-01-01)
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  5. 5

    Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review by J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal

    Published in IEEE Access (2025-01-01)
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  6. 6

    LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications by B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Amit Krishna Dwivedi

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  7. 7

    A Review of Performance and Reliability Issues in D Flip-Flops for Future Artificial Intelligence and Internet of Things Applications by Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal

    Published in IET Circuits, Devices and Systems (2025-01-01)
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  8. 8

    Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

    Published in Results in Engineering (2025-03-01)
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  9. 9

    Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers by A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar

    Published in Results in Engineering (2025-03-01)
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  10. 10

    NC-ROLL-FIA: Negative capacitance FET based designs for robust logic locking against fault injection attacks enabling trustworthy hardware for edge AI devices by Kadiyam Tirumalarao, Ramesh Vaddi, M. Durga Prakash, Asisa Kumar Panigrahy, J. Ajayan, Amit Krishna Dwivedi

    Published in Results in Engineering (2025-09-01)
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  11. 11

    Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective by Neelam Aruna Kumari, V. Bharath Sreenivasulu, Vikas Vijayvargiya, Abhishek Kumar Upadhyay, J. Ajayan, M. Uma

    Published in IEEE Access (2024-01-01)
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  12. 12

    A Novel L<sub>G</sub> = 40 nm AlN-GDC-HEMT on SiC Wafer With f<sub>T</sub>/I<sub>DS,peak</sub> of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers by B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal

    Published in IEEE Access (2024-01-01)
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