Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design, low power consumption and safe operation. p-...

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Bibliographic Details

Published in:	IEEE Access
Main Authors:	J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal
Format:	Article
Language:	English
Published:	IEEE 2025-01-01
Subjects:	Dynamic-ON-resistance (RON) enhancement mode (E-Mode) high electron mobility transistor (HEMT) positive bias temperature instability (PBTI) negative bias temperature instability (NBTI)
Online Access:	https://ieeexplore.ieee.org/document/11002527/