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    AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers 由 Yu-Shyan Lin, Chi-Che Lu

    發表在 Micromachines (2023-05-01)
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    Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors 由 Yu-Shyan Lin, Shin-Fu Lin

    發表在 Micromachines (2020-12-01)
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