Search Results - Yueh-Chin Lin

  • Showing 1 - 10 results of 10
Refine Results
  1. 1

    Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer by Shun Sing Liao, Yueh Chin Lin, Chuan Lung Chuang, Edward Yi Chang

    Published in International Journal of Photoenergy (2017-01-01)
    Get full text
    Article


  2. 2

    Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications by Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin

    Published in Micromachines (2023-12-01)
    Get full text
    Article


  3. 3

    Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications by Ming-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, Francisco Gamiz, Edward-Yi Chang

    Published in Micromachines (2023-04-01)
    Get full text
    Article


  4. 4

    High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications by Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen, Edward Yi Chang

    Published in Applied Physics Express (2024-01-01)
    Get full text
    Article


  5. 5

    Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications by Neng-Da Li, Yueh-Chin Lin, Kai-Wen Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

    Get full text
    Article


  6. 6

    Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications by Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

    Get full text
    Article


  7. 7

    Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application by Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang

    Get full text
    Article


  8. 8

    Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications by Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang

    Get full text
    Article


  9. 9

    Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices by Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang

    Published in AIP Advances (2017-08-01)
    Get full text
    Article


  10. 10

    Study of tri-gate AlGaN/GaN MOS-HEMTs for power application by Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang

    Published in Micro and Nano Engineering (2020-11-01)
    Get full text
    Article


Search Tools: