Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application

In this research, <inline-formula> <tex-math notation="LaTeX">$\Gamma $ </tex-math></inline-formula>-gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band. F...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Subjects:	AlGaN/GaN HEMT noise figure LNA
Online Access:	https://ieeexplore.ieee.org/document/10335920/