The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers

This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characteri...

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Bibliographic Details

Published in:	Journal of Telecommunications and Information Technology
Main Authors:	Robert Mroczyński, Grzegorz Głuszko, Romuald B. Beck, Andrzej Jakubowski, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, Dieter Schmeißer
Format:	Article
Language:	English
Published:	National Institute of Telecommunications 2023-06-01
Subjects:	ultra-thin dielectrics silicon oxynitride PECVD CMOS
Online Access:	https://jtit.pl/jtit/article/view/821