APA (7th ed.) Citation

Mroczyński, R., Głuszko, G., Beck, R. B., Jakubowski, A., Ćwil, M., Konarski, P., . . . Schmeißer, D. (2023, June). The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers. Journal of Telecommunications and Information Technology.

Chicago Style (17th ed.) Citation

Mroczyński, Robert, Grzegorz Głuszko, Romuald B. Beck, Andrzej Jakubowski, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, and Dieter Schmeißer. "The Influence of Annealing (900◦C) of Ultra-thin PECVD Silicon Oxynitride Layers." Journal of Telecommunications and Information Technology Jun. 2023.

MLA (9th ed.) Citation

Mroczyński, Robert, et al. "The Influence of Annealing (900◦C) of Ultra-thin PECVD Silicon Oxynitride Layers." Journal of Telecommunications and Information Technology, Jun. 2023.