Technology for boron-doped layers formation on the diamond

The authors investigated natural type IIa diamond crystals and CVD diamond films. The article presents electrophysical parameters of the structures obtained in different modes of ion implantation of boron into the crystal with further annealing. Parameters of the crystals with a high nitrogen impuri...

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Bibliographic Details

Published in:	Технологія та конструювання в електронній апаратурі
Main Authors:	K. N. Zyablyuk, A. Yu. Mityagin, N. H. Talipov, G. V. Chucheva, M. P. Duhnovskii, R. A. Khmel’nitskii
Format:	Article
Language:	English
Published:	Politekhperiodika 2012-10-01
Subjects:	diamond boron doping ion implantation microwave transistor
Online Access:	https://tkea.com.ua/index.php/journal/article/view/425